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| SSD55N03 Elektronische Bauelemente 55A, 25V,RDS(ON)6m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description TO-252 The SSD55N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Repetitive Avalanche Rated * Dynamic dv/dt Rating * Simple Drive Requirement * Fast Switching D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 25 20 55 35 215 62.5 0.5 Unit V V A A A W W/ C o Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range 2 EAS IAR Tj, Tstg 240 31 -55~+150 mJ A o C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 2.0 110 Unit o o C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSD55N03 Elektronische Bauelemente 55A, 25V,RDS(ON)6m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance 3 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 25 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=20V VDS=25V,VGS=0 VDS=20V,VGS=0 VGS=10V, ID=30A VGS=4.5V, ID=30A o 0.037 _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 25 6 9 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs 4.5 7 16.8 6 4.9 15.1 4 45.2 7.6 2326 331 174 30 _ _ _ _ _ _ _ _ _ _ _ m [ Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=28A VDS=20V VGS=5V _ _ _ _ VDD=15V ID=28A nS VGS=10V RG=3.3[ RD=0.53[ _ _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=28A Source-Drain Diode Parameter Forward On Voltage 3 Continuous Source Current(Body Diode) Symbol VSD IS Min. _ _ Typ. _ _ Max. 1.5 Unit V A Test Condition IS=20 A, VGS=0V,Tj=25 C VD=VG=0V,VS=1.5 V o 55 Notes: 1.Pulse width limited by safe operating area. 2. Staring Tj=25oC,VDD=25V,L=0.1mH,RG=25 [ ,IAS=10A 300us, dutycycleO2%. 3. Pulse widthO http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSD55N03 Elektronische Bauelemente 55A, 25V,RDS(ON)6m[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics 9 Fig 2. Typical Output Characteristics 8 7 6 5 4 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 01-Jun-2002 Rev. A http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SSD55N03 Elektronische Bauelemente 55A, 25V,RDS(ON)6m[ N-Channel Enhancement Mode Power Mos.FET 28 A V DS = 16 V V DS = 20 V V DS = 24 V Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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